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Figure 10. This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph.

The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to S8550. TO-92 1. Alibaba.com offers 3,089 datasheet transistor products. About 44% of these are transistors. A wide variety of datasheet transistor options are available to you, such as triode transistor, field-effect transistor, and bipolar junction transistor. Dianne michelle o holy night sheet

A916 datasheet, A916 pdf, A916 data sheet, datasheet, data sheet, pdf ... 1.000W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 0.050A Ic, 50 - hFE ...

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Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Novartis balance sheetAll MOSFET transistors datasheet. Parameters and characteristics. 2N3907 Datasheet, 2N3907 PDF, 2N3907 Data sheet, 2N3907 manual, 2N3907 pdf, 2N3907, datenblatt, Electronics 2N3907, alldatasheet, free, datasheet, Datasheets, data ... 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V - 150 mA 100 4 1 1 2 2 • Hermetic packages LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development.

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2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V - 150 mA 100 4 1 1 2 2 • Hermetic packages LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid The 2N34 is a PNP junction transistor for use as a low-power AF amplifier. It was the first in the series to be made by many manufacturers including RCA, Sylvania, Transitron, and ETCo (Electronic Transistors Corporation). The 2N35, assigned to Sylvania, was also made by other manufacturers: RCA,...